APTGT75DH120TG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Modules

Transistor Element Material :

SILICON

Max Collector Current :

110A

Collector Emitter Breakdown Voltage :

1.2kV

Voltage - Collector Emitter Breakdown (Max) :

1200V

Turn On Time :

335 ns

RoHS Status :

RoHS Compliant

Number of Pins :

20

Mount :

Chassis Mount, Screw

Pin Count :

14

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 75A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-XUFM-X14

Case Connection :

Isolated

NTC Thermistor :

yes

Operating Temperature :

-40°C~150°C TJ

Package / Case :

SP4

Number of Elements :

2

Additional Feature :

AVALANCHE RATED

Element Configuration :

Dual

Pbfree Code :

yes

Configuration :

Asymmetrical Bridge

Published :

2006

Collector Emitter Voltage (VCEO) :

1.2kV

Max Power Dissipation :

357W

Qualification Status :

Not Qualified

IGBT Type :

Trench Field Stop

Number of Terminations :

14

Turn Off Time-Nom (toff) :

610 ns

ECCN Code :

EAR99

Factory Lead Time :

22 Weeks

Input :

Standard

JESD-609 Code :

e1

Mounting Type :

Chassis Mount

Terminal Form :

UNSPECIFIED

Input Capacitance (Cies) @ Vce :

5.34nF @ 25V

Current - Collector Cutoff (Max) :

250μA

Power - Max :

357W

Transistor Application :

POWER CONTROL

Input Capacitance :

5.34nF

Terminal Position :

UPPER

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

TIN SILVER COPPER