APT7M120S

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain-source On Resistance-Max :

2.5Ohm

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

8A

Power Dissipation-Max :

335W Tc

Mount :

Surface Mount

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2565pF @ 25V

Published :

1997

RoHS Status :

RoHS Compliant

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

245

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Drain to Source Voltage (Vdss) :

1200V

Drain Current-Max (Abs) (ID) :

7A

JESD-30 Code :

R-PDSO-G2

JESD-609 Code :

e1

Avalanche Energy Rating (Eas) :

575 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

5V @ 1mA

DS Breakdown Voltage-Min :

1200V

Terminal Position :

Dual

Factory Lead Time :

19 Weeks

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Series :

POWER MOS 8™

Number of Elements :

1

Packaging :

Bulk

Rds On (Max) @ Id, Vgs :

2.1 Ω @ 3A, 10V

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Vgs (Max) :

±30V