APT77N60SC6
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- Mfr.Part #
- APT77N60SC6
- Manufacturer
- Microchip Technology
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 77A D3PAK
- Stock
- 20,358
- In Stock ：
- 20,358
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Turn On Delay Time :
- 18 ns
- Number of Terminations :
- 2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation :
- 481W
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 272A
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 13600pF @ 25V
- Rise Time :
- 27ns
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 41m Ω @ 44.4A, 10V
- Terminal Finish :
- Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 77A Tc
- Number of Elements :
- 1
- Number of Pins :
- 3
- Radiation Hardening :
- No
- FET Feature :
- Super Junction
- DS Breakdown Voltage-Min :
- 600V
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Terminal Position :
- Single
- Power Dissipation-Max :
- 481W Tc
- Fall Time (Typ) :
- 8 ns
- Continuous Drain Current (ID) :
- 77A
- Series :
- CoolMOS™
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 110 ns
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 25 Weeks
- Drain to Source Voltage (Vdss) :
- 600V
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Bulk
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 3.6V @ 2.96mA
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- JESD-30 Code :
- R-PSSO-G2
- Published :
- 1997
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- APT77N60SC6
N-Channel Bulk 41m Ω @ 44.4A, 10V ±20V 13600pF @ 25V 260nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APT77N60SC6 Overview
A device's maximum input capacitance is 13600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 77A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 110 ns.Its maximum pulsed drain current is 272A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 600V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APT77N60SC6 Features
a continuous drain current (ID) of 77A
the turn-off delay time is 110 ns
based on its rated peak drain current 272A.
a 600V drain to source voltage (Vdss)
APT77N60SC6 Applications
There are a lot of Microsemi Corporation
APT77N60SC6 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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