APT77N60BC6
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- Mfr.Part #
- APT77N60BC6
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 77A TO247
- Stock
- 3
- In Stock ：
- 3
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 600V
- Series :
- CoolMOS™
- JESD-609 Code :
- e1
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- TIN SILVER COPPER
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 1997
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 77A Tc
- Factory Lead Time :
- 24 Weeks
- Length :
- 21.46mm
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Rise Time :
- 27ns
- Number of Terminations :
- 3
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 41m Ω @ 44.4A, 10V
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 18 ns
- RoHS Status :
- RoHS Compliant
- FET Feature :
- Super Junction
- Power Dissipation :
- 481W
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Width :
- 16.26mm
- Vgs(th) (Max) @ Id :
- 3.6V @ 2.96mA
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 77A
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Transistor Element Material :
- SILICON
- Height :
- 5.31mm
- Turn-Off Delay Time :
- 110 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 13600pF @ 25V
- Packaging :
- Tube
- Package / Case :
- TO-247-3
- Weight :
- 38.000013g
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 272A
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 8 ns
- Power Dissipation-Max :
- 481W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Datasheets
- APT77N60BC6
N-Channel Tube 41m Ω @ 44.4A, 10V ±20V 13600pF @ 25V 260nC @ 10V TO-247-3
APT77N60BC6 Overview
A device's maximum input capacitance is 13600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 77A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 110 ns.Its maximum pulsed drain current is 272A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT77N60BC6 Features
a continuous drain current (ID) of 77A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 272A.
APT77N60BC6 Applications
There are a lot of Microsemi Corporation
APT77N60BC6 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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