APT75M50B2
- Mfr.Part #
- APT75M50B2
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 75A T-MAX
- Stock
- 46,166
- In Stock :
- 46,166
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 1040W Tc
- Rise Time :
- 55ns
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 1997
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 1.04kW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 500V
- Factory Lead Time :
- 22 Weeks
- Mount :
- Through Hole
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 75A
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Fall Time (Typ) :
- 39 ns
- Package / Case :
- TO-247-3 Variant
- Current Rating :
- 75A
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn On Delay Time :
- 45 ns
- Terminal Finish :
- PURE MATTE TIN
- Additional Feature :
- High Reliability
- Drain-source On Resistance-Max :
- 0.075Ohm
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 290nC @ 10V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 11600pF @ 25V
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 37A, 10V
- Turn-Off Delay Time :
- 120 ns
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Packaging :
- Tube
- Datasheets
- APT75M50B2
N-Channel Tube 75m Ω @ 37A, 10V ±30V 11600pF @ 25V 290nC @ 10V TO-247-3 Variant
APT75M50B2 Overview
A device's maximum input capacitance is 11600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 120 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 45 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT75M50B2 Features
a continuous drain current (ID) of 75A
the turn-off delay time is 120 ns
APT75M50B2 Applications
There are a lot of Microsemi Corporation
APT75M50B2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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