APT75GT120JU2
- Mfr.Part #
- APT75GT120JU2
- Manufacturer
- Microchip Technology
- Package / Case
- ISOTOP
- Datasheet
- Download
- Description
- IGBT MOD 1200V 100A 416W SOT227
- Stock
- 48,034
- In Stock :
- 48,034
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Modules
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 75A
- Published :
- 2004
- Polarity/Channel Type :
- N-Channel
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Gate-Emitter Voltage-Max :
- 20V
- Power - Max :
- 416W
- Input Capacitance (Cies) @ Vce :
- 5.34nF @ 25V
- Mount :
- Chassis Mount, Screw
- Max Collector Current :
- 100A
- Package / Case :
- ISOTOP
- Pbfree Code :
- yes
- Weight :
- 30.000004g
- Configuration :
- Single
- Height :
- 9.6mm
- Additional Feature :
- AVALANCHE RATED, LOW CONDUCTION LOSS
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 36 Weeks
- Terminal Form :
- UNSPECIFIED
- Mounting Type :
- Chassis Mount
- RoHS Status :
- RoHS Compliant
- Length :
- 38.2mm
- NTC Thermistor :
- No
- Turn On Time :
- 335 ns
- Lead Free :
- Lead Free
- Input :
- Standard
- Turn Off Time-Nom (toff) :
- 610 ns
- Max Power Dissipation :
- 416W
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 5mA
- Width :
- 25.4mm
- Input Capacitance :
- 5.34nF
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Terminal Position :
- UPPER
- VCEsat-Max :
- 2.1 V
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Collector Emitter Saturation Voltage :
- 1.7V
- Pin Count :
- 4
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Transistor Application :
- POWER CONTROL
- IGBT Type :
- Trench Field Stop
- Number of Pins :
- 4
- Datasheets
- APT75GT120JU2
APT75GT120JU2 datasheet pdf and Transistors - IGBTs - Modules product details from Microsemi Corporation stock available at
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