APT75F50L

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Mounting Type :

Through Hole

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Power Dissipation :

1.04kW

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Pulsed Drain Current-Max (IDM) :

230A

Pbfree Code :

yes

Fall Time (Typ) :

39 ns

Drain-source On Resistance-Max :

0.075Ohm

Rise Time :

55ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

75m Ω @ 37A, 10V

Terminal Position :

Single

Transistor Element Material :

SILICON

Turn On Delay Time :

45 ns

Power Dissipation-Max :

1040W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

500V

Number of Elements :

1

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 2.5mA

JESD-609 Code :

e3

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

500V

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Published :

1997

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Package / Case :

TO-264-3, TO-264AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

25 Weeks

Terminal Finish :

PURE MATTE TIN

Turn-Off Delay Time :

120 ns

Input Capacitance (Ciss) (Max) @ Vds :

11600pF @ 25V

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

75A

Case Connection :

DRAIN

Series :

POWER MOS 8™