APT75F50L

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Mfr.Part #
APT75F50L
Manufacturer
Microchip Technology
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 500V 75A TO264
Stock
23,936
In Stock :
23,936

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
1.04kW
Number of Terminations :
3
FET Type :
N-Channel
Radiation Hardening :
No
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
10V
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs :
290nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
1040W Tc
Rise Time :
55ns
Gate to Source Voltage (Vgs) :
30V
Pbfree Code :
yes
Pulsed Drain Current-Max (IDM) :
230A
Continuous Drain Current (ID) :
75A
Transistor Element Material :
SILICON
Turn On Delay Time :
45 ns
Terminal Position :
Single
Case Connection :
DRAIN
Vgs (Max) :
±30V
Turn-Off Delay Time :
120 ns
Series :
POWER MOS 8™
Lifecycle Status :
IN PRODUCTION (Last Updated: 3 weeks ago)
Vgs(th) (Max) @ Id :
5V @ 2.5mA
Number of Elements :
1
Package / Case :
TO-264-3, TO-264AA
Factory Lead Time :
25 Weeks
Input Capacitance (Ciss) (Max) @ Vds :
11600pF @ 25V
Mount :
Through Hole
Terminal Finish :
PURE MATTE TIN
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Packaging :
Tube
Fall Time (Typ) :
39 ns
JESD-609 Code :
e3
Pin Count :
3
Rds On (Max) @ Id, Vgs :
75m Ω @ 37A, 10V
Drain-source On Resistance-Max :
0.075Ohm
Drain to Source Voltage (Vdss) :
500V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSFM-T3
DS Breakdown Voltage-Min :
500V
Published :
1997
Datasheets
APT75F50L
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology APT75F50L from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-264-3, TO-264AA, Mounting Type:Through Hole, APT75F50L pinout, APT75F50L datasheet PDF, APT75F50L amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology APT75F50L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology APT75F50L


N-Channel Tube 75m Ω @ 37A, 10V ±30V 11600pF @ 25V 290nC @ 10V 500V TO-264-3, TO-264AA

APT75F50L Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 11600pF @ 25V.This device conducts a continuous drain current (ID) of 75A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 120 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 230A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 45 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 500V.This transistor requires a drain-source voltage (Vdss) of 500V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

APT75F50L Features


a continuous drain current (ID) of 75A
the turn-off delay time is 120 ns
based on its rated peak drain current 230A.
a 500V drain to source voltage (Vdss)


APT75F50L Applications


There are a lot of Microsemi Corporation
APT75F50L applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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