APT75F50B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

11.6nF

Rise Time :

55ns

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Power Dissipation-Max :

1040W Tc

Gate to Source Voltage (Vgs) :

30V

Vgs (Max) :

±30V

Series :

POWER MOS 8™

Max Operating Temperature :

150°C

Packaging :

Tube

Turn On Delay Time :

45 ns

Supplier Device Package :

T-MAX™ [B2]

Mount :

Through Hole

Fall Time (Typ) :

39 ns

Package / Case :

TO-247-3 Variant

Power Dissipation :

1.04kW

Rds On (Max) @ Id, Vgs :

75mOhm @ 37A, 10V

Turn-Off Delay Time :

120 ns

Continuous Drain Current (ID) :

75A

Published :

1997

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

23 Weeks

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Rds On Max :

75 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

11600pF @ 25V

Vgs(th) (Max) @ Id :

5V @ 2.5mA

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

500V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Min Operating Temperature :

-55°C

Mounting Type :

Through Hole