APT38N60SC6

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

278W Tc

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

38A

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.5V @ 1.2mA

DS Breakdown Voltage-Min :

600V

Terminal Form :

Gull wing

Series :

CoolMOS™

FET Type :

N-Channel

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

112A

Gate Charge (Qg) (Max) @ Vgs :

112nC @ 10V

JESD-30 Code :

R-PSSO-G2

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

796 mJ

Number of Elements :

1

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

99m Ω @ 18A, 10V

Drain to Source Voltage (Vdss) :

600V

Mounting Type :

Surface Mount

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2826pF @ 25V

Case Connection :

DRAIN

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Packaging :

Bulk

Terminal Finish :

Tin

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.099Ohm