APT38F80L

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.28Ohm

Mount :

Through Hole

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

41A

Configuration :

Single

Voltage - Rated DC :

800V

Terminal Finish :

PURE MATTE TIN

Drain Current-Max (Abs) (ID) :

22A

Turn-Off Delay Time :

200 ns

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

240m Ω @ 20A, 10V

Published :

1997

Transistor Application :

SWITCHING

Power Dissipation :

1.04kW

Package / Case :

TO-264-3, TO-264AA

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Series :

POWER MOS 8™

Lead Free :

Lead Free

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Power Dissipation-Max :

1040W Tc

JESD-30 Code :

R-PSFM-T3

Factory Lead Time :

33 Weeks

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Rise Time :

65ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

46 ns

Qualification Status :

Not Qualified

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

8070pF @ 25V

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Terminal Position :

Single

Current Rating :

38A

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Fall Time (Typ) :

60 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED