APT38F80B2
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- Mfr.Part #
- APT38F80B2
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 41A T-MAX
- Stock
- 30
- In Stock ：
- 30
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 46 ns
- JEDEC-95 Code :
- TO-247AB
- Factory Lead Time :
- 33 Weeks
- Turn-Off Delay Time :
- 200 ns
- JESD-30 Code :
- R-PSIP-T3
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation :
- 1.04kW
- Terminal Finish :
- Pure Matte Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 30V
- Rise Time :
- 65ns
- Drain-source On Resistance-Max :
- 0.24Ohm
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 800V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 8070pF @ 25V
- Package / Case :
- TO-247-3 Variant
- Vgs (Max) :
- ±30V
- Series :
- POWER MOS 8™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 41A
- Terminal Position :
- Single
- Mount :
- Through Hole
- Published :
- 1997
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 20A, 10V
- Drain to Source Voltage (Vdss) :
- 800V
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 1040W Tc
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Fall Time (Typ) :
- 60 ns
- Datasheets
- APT38F80B2
N-Channel Tube 240m Ω @ 20A, 10V ±30V 8070pF @ 25V 260nC @ 10V 800V TO-247-3 Variant
APT38F80B2 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8070pF @ 25V.This device conducts a continuous drain current (ID) of 41A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 200 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 46 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 800V.This transistor requires a drain-source voltage (Vdss) of 800V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT38F80B2 Features
a continuous drain current (ID) of 41A
the turn-off delay time is 200 ns
a 800V drain to source voltage (Vdss)
APT38F80B2 Applications
There are a lot of Microsemi Corporation
APT38F80B2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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