APT38F80B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Pure Matte Tin (Sn)

Rise Time :

65ns

Drain to Source Voltage (Vdss) :

800V

ECCN Code :

EAR99

JEDEC-95 Code :

TO-247AB

Pbfree Code :

yes

Turn On Delay Time :

46 ns

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Case Connection :

DRAIN

Mount :

Through Hole

Factory Lead Time :

33 Weeks

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Power Dissipation :

1.04kW

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Series :

POWER MOS 8™

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

800V

Continuous Drain Current (ID) :

41A

Fall Time (Typ) :

60 ns

JESD-30 Code :

R-PSIP-T3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Package / Case :

TO-247-3 Variant

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

240m Ω @ 20A, 10V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Terminal Position :

Single

Vgs (Max) :

±30V

Pin Count :

3

FET Type :

N-Channel

Transistor Element Material :

SILICON

Power Dissipation-Max :

1040W Tc

Number of Terminations :

3

Turn-Off Delay Time :

200 ns

Input Capacitance (Ciss) (Max) @ Vds :

8070pF @ 25V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.24Ohm

Gate to Source Voltage (Vgs) :

30V