APT38F50J
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- Mfr.Part #
- APT38F50J
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 38A ISOTOP
- Stock
- 6,580
- In Stock ：
- 6,580
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 33 ns
- Number of Terminations :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 220nC @ 10V
- Number of Elements :
- 1
- Mount :
- Chassis Mount, Screw
- Number of Pins :
- 4
- Mounting Type :
- Chassis Mount
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- RoHS Status :
- RoHS Compliant
- DS Breakdown Voltage-Min :
- 500V
- Terminal Form :
- UNSPECIFIED
- Terminal Position :
- UPPER
- Packaging :
- Tube
- Pbfree Code :
- yes
- Pin Count :
- 4
- Power Dissipation-Max :
- 355W Tc
- Radiation Hardening :
- No
- Published :
- 1997
- Turn On Delay Time :
- 38 ns
- FET Type :
- N-Channel
- Power Dissipation :
- 355W
- Series :
- POWER MOS 8™
- Factory Lead Time :
- 22 Weeks
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 28A, 10V
- Continuous Drain Current (ID) :
- 38A
- Input Capacitance (Ciss) (Max) @ Vds :
- 8800pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Drain to Source Voltage (Vdss) :
- 500V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Rise Time :
- 45ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Case Connection :
- Isolated
- Package / Case :
- SOT-227-4, miniBLOC
- Turn-Off Delay Time :
- 100 ns
- Datasheets
- APT38F50J
N-Channel Tube 100m Ω @ 28A, 10V ±30V 8800pF @ 25V 220nC @ 10V 500V SOT-227-4, miniBLOC
APT38F50J Overview
A device's maximum input capacitance is 8800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 38A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 38 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APT38F50J Features
a continuous drain current (ID) of 38A
the turn-off delay time is 100 ns
a 500V drain to source voltage (Vdss)
APT38F50J Applications
There are a lot of Microsemi Corporation
APT38F50J applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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