APT37M100B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

40ns

Continuous Drain Current (ID) :

37A

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

1000V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

18 Weeks

Terminal Finish :

PURE MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Gate Charge (Qg) (Max) @ Vgs :

305nC @ 10V

Pin Count :

3

Power Dissipation-Max :

1135W Tc

Vgs (Max) :

±30V

Published :

1997

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Radiation Hardening :

No

Number of Terminations :

3

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Mounting Type :

Through Hole

Lead Free :

Lead Free

Turn On Delay Time :

44 ns

Package / Case :

TO-247-3 Variant

Pbfree Code :

yes

JESD-609 Code :

e3

Turn-Off Delay Time :

150 ns

FET Type :

N-Channel

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

330m Ω @ 18A, 10V

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

38 ns

Voltage - Rated DC :

1kV

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Current Rating :

37A

Additional Feature :

AVALANCHE RATED

Packaging :

Tube

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

9835pF @ 25V