APT37M100B2
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- Mfr.Part #
- APT37M100B2
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 37A T-MAX
- Stock
- 26
- In Stock ：
- 26
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Package / Case :
- TO-247-3 Variant
- Number of Elements :
- 1
- Current Rating :
- 37A
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 305nC @ 10V
- Voltage - Rated DC :
- 1kV
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Turn On Delay Time :
- 44 ns
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 1135W Tc
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 18A, 10V
- Additional Feature :
- AVALANCHE RATED
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 1997
- Continuous Drain Current (ID) :
- 37A
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Rise Time :
- 40ns
- Drain to Source Voltage (Vdss) :
- 1000V
- Terminal Finish :
- PURE MATTE TIN
- Vgs (Max) :
- ±30V
- Fall Time (Typ) :
- 38 ns
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 9835pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 37A Tc
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Factory Lead Time :
- 18 Weeks
- Turn-Off Delay Time :
- 150 ns
- Datasheets
- APT37M100B2
N-Channel Tube 330m Ω @ 18A, 10V ±30V 9835pF @ 25V 305nC @ 10V 1000V TO-247-3 Variant
APT37M100B2 Overview
A device's maximum input capacitance is 9835pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 37A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 150 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 44 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1000V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APT37M100B2 Features
a continuous drain current (ID) of 37A
the turn-off delay time is 150 ns
a 1000V drain to source voltage (Vdss)
APT37M100B2 Applications
There are a lot of Microsemi Corporation
APT37M100B2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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