APT37F50S
- Mfr.Part #
- APT37F50S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 37A D3PAK
- Stock
- 39,299
- In Stock :
- 39,299
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Terminal Finish :
- PURE MATTE TIN
- Qualification Status :
- Not Qualified
- Drain to Source Voltage (Vdss) :
- 500V
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pulsed Drain Current-Max (IDM) :
- 115A
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 18A, 10V
- Power Dissipation-Max :
- 520W Tc
- Continuous Drain Current (ID) :
- 37A
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.15Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Vgs (Max) :
- ±30V
- Factory Lead Time :
- 23 Weeks
- Avalanche Energy Rating (Eas) :
- 780 mJ
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5710pF @ 25V
- Mounting Type :
- Surface Mount
- DS Breakdown Voltage-Min :
- 500V
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Peak Reflow Temperature (Cel) :
- 245
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 37A Tc
- Pbfree Code :
- yes
- Series :
- POWER MOS 8™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- APT37F50S

N-Channel Tube 150m Ω @ 18A, 10V ±30V 5710pF @ 25V 145nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
APT37F50S Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 780 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5710pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is a peak drain current of 115A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 500V, it should remain above the 500V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
APT37F50S Features
the avalanche energy rating (Eas) is 780 mJ
a continuous drain current (ID) of 37A
based on its rated peak drain current 115A.
a 500V drain to source voltage (Vdss)
APT37F50S Applications
There are a lot of Microsemi Corporation
APT37F50S applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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