APT37F50B
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- Mfr.Part #
- APT37F50B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 37A TO247
- Stock
- 80
- In Stock ：
- 80
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 5.31mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 37A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 145nC @ 10V
- Power Dissipation :
- 520W
- Current Rating :
- 37A
- Turn-Off Delay Time :
- 65 ns
- Fall Time (Typ) :
- 21 ns
- Length :
- 21.46mm
- Factory Lead Time :
- 22 Weeks
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 37A
- Vgs (Max) :
- ±30V
- Width :
- 16.26mm
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 520W Tc
- Additional Feature :
- FAST SWITCHING, AVALANCHE RATED
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 18A, 10V
- Pbfree Code :
- yes
- Turn On Delay Time :
- 25 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 38.000013g
- Case Connection :
- DRAIN
- Pin Count :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 3 weeks ago)
- Lead Free :
- Lead Free
- Rise Time :
- 29ns
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 500V
- JEDEC-95 Code :
- TO-247AB
- JESD-609 Code :
- e1
- Avalanche Energy Rating (Eas) :
- 780 mJ
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-3
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 5710pF @ 25V
- Configuration :
- Single
- Voltage - Rated DC :
- 500V
- Datasheets
- APT37F50B
N-Channel Tube 150m Ω @ 18A, 10V ±30V 5710pF @ 25V 145nC @ 10V TO-247-3
APT37F50B Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 780 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5710pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 37A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.It is [65 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
APT37F50B Features
the avalanche energy rating (Eas) is 780 mJ
a continuous drain current (ID) of 37A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
APT37F50B Applications
There are a lot of Microsemi Corporation
APT37F50B applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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