APT34N80LC3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

145m Ω @ 22A, 10V

Length :

26.49mm

Continuous Drain Current (ID) :

34A

Qualification Status :

Not Qualified

Width :

20.5mm

Turn On Delay Time :

25 ns

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Input Capacitance (Ciss) (Max) @ Vds :

4510pF @ 25V

Weight :

10.6g

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Terminal Finish :

TIN SILVER COPPER

Lead Free :

Lead Free

Voltage - Rated DC :

800V

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

15ns

Factory Lead Time :

24 Weeks

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Power Dissipation-Max :

417W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Case Connection :

DRAIN

FET Type :

N-Channel

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

355nC @ 10V

Fall Time (Typ) :

6 ns

Transistor Element Material :

SILICON

Current Rating :

34A

Vgs(th) (Max) @ Id :

3.9V @ 2mA

Mounting Type :

Through Hole

Number of Terminations :

3

Turn-Off Delay Time :

70 ns

Published :

1997

Avalanche Energy Rating (Eas) :

670 mJ

Power Dissipation :

417W

Package / Case :

TO-264-3, TO-264AA

JESD-609 Code :

e1

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Height :

5.21mm