APT34N80B2C3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

670 mJ

Vgs(th) (Max) @ Id :

3.9V @ 2mA

Fall Time (Typ) :

6 ns

Rds On (Max) @ Id, Vgs :

145m Ω @ 22A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

4510pF @ 25V

Pin Count :

3

Additional Feature :

AVALANCHE RATED

Pbfree Code :

yes

Power Dissipation :

417W

Turn-Off Delay Time :

70 ns

Factory Lead Time :

18 Weeks

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

JESD-609 Code :

e1

Current Rating :

34A

FET Type :

N-Channel

Turn On Delay Time :

25 ns

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Terminal Finish :

TIN SILVER COPPER

Gate Charge (Qg) (Max) @ Vgs :

355nC @ 10V

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Packaging :

Tube

Package / Case :

TO-247-3 Variant

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

417W Tc

Published :

1997

Rise Time :

15ns

Vgs (Max) :

±20V

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Number of Pins :

3

Continuous Drain Current (ID) :

34A

Voltage - Rated DC :

800V

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3