APT34M60S
- Mfr.Part #
- APT34M60S
- Manufacturer
- Microchip Technology
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 36A D3PAK
- Stock
- 40
- In Stock :
- 40
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- Transistor Type :
- 1 N-Channel
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Package Shape :
- RECTANGULAR
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 36A (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- Base Product Number :
- APT34M60
- Drain Current-Max (Abs) (ID) :
- 34 A
- Drain to Source Voltage (Vdss) :
- 600 V
- Pulsed Drain Current-Max (IDM) :
- 124 A
- Power Dissipation (Max) :
- 624W (Tc)
- Minimum Operating Temperature :
- - 55 C
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- N-Channel
- Subcategory :
- MOSFETs
- Number of Elements :
- 1
- Supplier Device Package :
- D3PAK
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 190mOhm @ 17A, 10V
- Maximum Operating Temperature :
- + 150 C
- Surface Mount :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 165 nC @ 10 V
- Series :
- POWER MOS 8?
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Vgs (Max) :
- ±30V
- Manufacturer :
- Microchip
- Power Dissipation-Max (Abs) :
- 624 W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS :
- Details
- Transistor Polarity :
- N-Channel
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Peak Reflow Temperature (Cel) :
- 245
- Channel Mode :
- Enhancement
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Drain-source On Resistance-Max :
- 0.19 Ω
- Avalanche Energy Rating (Eas) :
- 930 mJ
- Configuration :
- Single
- FET Type :
- N-Channel
- Rise Time :
- 43 ns
- Mounting Style :
- SMD/SMT
- Package :
- Tube
- Continuous Drain Current Id :
- 36
- Terminal Position :
- Single
- Terminal Finish :
- Pure Matte Tin (Sn)
- Reach Compliance Code :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 6640 pF @ 25 V
- JESD-30 Code :
- R-PSSO-G2
- Product Category :
- MOSFET
- Number of Channels :
- 1 Channel
- Product Type :
- MOSFET
- FET Feature :
- -
- Channel Type :
- N
- DS Breakdown Voltage-Min :
- 600 V
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Number of Terminals :
- 2
- Brand :
- Microchip Technology / Atmel
- Datasheets
- APT34M60S

N-Channel Tube 190mOhm @ 17A, 10V ±30V 6640 pF @ 25 V 165 nC @ 10 V 600 V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
APT34M60S Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 930 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6640 pF @ 25 V.There is no drain current on this device since the maximum continuous current it can conduct is 34 A.There is a peak drain current of 124 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 600 V, it should remain above the 600 V level.The transistor must receive a 600 V drain to source voltage (Vdss) in order to function.
APT34M60S Features
the avalanche energy rating (Eas) is 930 mJ
based on its rated peak drain current 124 A.
a 600 V drain to source voltage (Vdss)
APT34M60S Applications
There are a lot of Microchip Technology
APT34M60S applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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