APT34M60B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

190m Ω @ 17A, 10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

6640pF @ 25V

Voltage - Rated DC :

600V

JEDEC-95 Code :

TO-247AB

Published :

1997

JESD-609 Code :

e1

Factory Lead Time :

18 Weeks

Series :

POWER MOS 8™

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

TIN SILVER COPPER

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Vgs(th) (Max) @ Id :

5V @ 1mA

Drain Current-Max (Abs) (ID) :

58A

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

115 ns

Case Connection :

DRAIN

Current Rating :

34A

Pbfree Code :

yes

Transistor Application :

SWITCHING

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Continuous Drain Current (ID) :

36A

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

34 ns

Vgs (Max) :

±30V

Number of Terminations :

3

Rise Time :

43ns

Mounting Type :

Through Hole

Turn On Delay Time :

37 ns

Package / Case :

TO-247-3

Lead Free :

Lead Free

Configuration :

Single

Power Dissipation-Max :

624W Tc

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Pin Count :

3

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

930 mJ

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

165nC @ 10V