APT34M120J
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- Mfr.Part #
- APT34M120J
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 35A SOT227
- Stock
- 20,534
- In Stock ：
- 20,534
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Continuous Drain Current (ID) :
- 35A
- Terminal Form :
- UNSPECIFIED
- Height :
- 9.6mm
- Vgs (Max) :
- ±30V
- Current Rating :
- 34A
- Turn-Off Delay Time :
- 315 ns
- Fall Time (Typ) :
- 90 ns
- Pbfree Code :
- yes
- Rise Time :
- 60ns
- Lead Free :
- Lead Free
- Width :
- 25.4mm
- Mount :
- Chassis Mount, Screw
- Input Capacitance (Ciss) (Max) @ Vds :
- 18200pF @ 25V
- Terminal Position :
- UPPER
- Voltage - Rated DC :
- 1.2kV
- ECCN Code :
- EAR99
- Published :
- 1997
- Number of Channels :
- 1
- Weight :
- 30.000004g
- Mounting Type :
- Chassis Mount
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 560nC @ 10V
- Drain to Source Voltage (Vdss) :
- 1200V
- Rds On (Max) @ Id, Vgs :
- 300m Ω @ 25A, 10V
- Radiation Hardening :
- No
- Turn On Delay Time :
- 100 ns
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Factory Lead Time :
- 18 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 960W
- FET Type :
- N-Channel
- Pin Count :
- 4
- Package / Case :
- SOT-227-4, miniBLOC
- Drain-source On Resistance-Max :
- 0.29Ohm
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 960W Tc
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- RoHS Status :
- RoHS Compliant
- Length :
- 38.2mm
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Element Configuration :
- Single
- Number of Terminations :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 4
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 2700 mJ
- Datasheets
- APT34M120J
N-Channel Tube 300m Ω @ 25A, 10V ±30V 18200pF @ 25V 560nC @ 10V 1200V SOT-227-4, miniBLOC
APT34M120J Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2700 mJ.A device's maximum input capacitance is 18200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 35A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 315 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 100 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APT34M120J Features
the avalanche energy rating (Eas) is 2700 mJ
a continuous drain current (ID) of 35A
the turn-off delay time is 315 ns
a 1200V drain to source voltage (Vdss)
APT34M120J Applications
There are a lot of Microsemi Corporation
APT34M120J applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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