APT34F60B
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- Mfr.Part #
- APT34F60B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 36A TO247
- Stock
- 8,272
- In Stock ：
- 8,272
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- DS Breakdown Voltage-Min :
- 600V
- Fall Time (Typ) :
- 34 ns
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Packaging :
- Tube
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 6640pF @ 25V
- JEDEC-95 Code :
- TO-247AD
- Turn-Off Delay Time :
- 115 ns
- Radiation Hardening :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Turn On Delay Time :
- 37 ns
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 210m Ω @ 17A, 10V
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Terminal Finish :
- TIN SILVER COPPER
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Continuous Drain Current (ID) :
- 36A
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- JESD-609 Code :
- e1
- Factory Lead Time :
- 22 Weeks
- Mount :
- Through Hole
- Pin Count :
- 3
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 165nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Published :
- 1997
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 43ns
- Power Dissipation-Max :
- 624W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Avalanche Energy Rating (Eas) :
- 930 mJ
- Package / Case :
- TO-247-3
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±30V
- Pbfree Code :
- yes
- Drain to Source Voltage (Vdss) :
- 600V
- FET Type :
- N-Channel
- Datasheets
- APT34F60B
N-Channel Tube 210m Ω @ 17A, 10V ±30V 6640pF @ 25V 165nC @ 10V 600V TO-247-3
APT34F60B Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 930 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6640pF @ 25V.This device conducts a continuous drain current (ID) of 36A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 115 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 37 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT34F60B Features
the avalanche energy rating (Eas) is 930 mJ
a continuous drain current (ID) of 36A
the turn-off delay time is 115 ns
a 600V drain to source voltage (Vdss)
APT34F60B Applications
There are a lot of Microsemi Corporation
APT34F60B applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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