APT34F100B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

35A

Turn-Off Delay Time :

150 ns

FET Type :

N-Channel

Factory Lead Time :

22 Weeks

Package / Case :

TO-247-3 Variant

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

305nC @ 10V

Fall Time (Typ) :

38 ns

Terminal Position :

Single

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Series :

POWER MOS 8™

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Pbfree Code :

yes

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Current Rating :

34A

Turn On Delay Time :

39 ns

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

1000V

Packaging :

Tube

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1135W Tc

Mount :

Through Hole

Terminal Finish :

Pure Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

9835pF @ 25V

Rds On (Max) @ Id, Vgs :

380m Ω @ 18A, 10V

RoHS Status :

RoHS Compliant

Case Connection :

DRAIN

Vgs (Max) :

±30V

ECCN Code :

EAR99

Rise Time :

40ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Published :

1997

JEDEC-95 Code :

TO-247AB

Voltage - Rated DC :

1kV