APT33N90JCU3
- Mfr.Part #
- APT33N90JCU3
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 33A SOT227
- Stock
- 37,688
- In Stock :
- 37,688
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- Isolated
- Power Dissipation-Max :
- 290W Tc
- Mount :
- Chassis Mount, Screw
- Operating Temperature :
- -40°C~150°C TJ
- FET Type :
- N-Channel
- Number of Terminations :
- 4
- Package / Case :
- SOT-227-4, miniBLOC
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Packaging :
- Tray
- Terminal Form :
- UNSPECIFIED
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Published :
- 2012
- Pulsed Drain Current-Max (IDM) :
- 75A
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 100V
- Continuous Drain Current (ID) :
- 33A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Drain to Source Voltage (Vdss) :
- 900V
- Vgs(th) (Max) @ Id :
- 3.5V @ 3mA
- RoHS Status :
- RoHS Compliant
- DS Breakdown Voltage-Min :
- 900V
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 26A, 10V
- Pin Count :
- 4
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Chassis Mount
- Number of Pins :
- 4
- Number of Elements :
- 1
- Power Dissipation :
- 290W
- Terminal Position :
- UPPER
- Factory Lead Time :
- 22 Weeks
- FET Feature :
- Super Junction
- Qualification Status :
- Not Qualified
- Datasheets
- APT33N90JCU3

N-Channel Tray 120m Ω @ 26A, 10V ±20V 6800pF @ 100V 270nC @ 10V 900V SOT-227-4, miniBLOC
APT33N90JCU3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6800pF @ 100V.This device has a continuous drain current (ID) of [33A], which is its maximum continuous current.A maximum pulsed drain current of 75A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 900V.In order to operate this transistor, a voltage of 900V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
APT33N90JCU3 Features
a continuous drain current (ID) of 33A
based on its rated peak drain current 75A.
a 900V drain to source voltage (Vdss)
APT33N90JCU3 Applications
There are a lot of Microsemi Corporation
APT33N90JCU3 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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