APT33N90JCCU3
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- Mfr.Part #
- APT33N90JCCU3
- Manufacturer
- Microsemi
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 33A SOT227
- Stock
- 8,546
- In Stock ：
- 8,546
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Chassis Mount
- Number of Terminations :
- 4
- Turn On Delay Time :
- 70 ns
- Package / Case :
- SOT-227-4, miniBLOC
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Terminal Form :
- UNSPECIFIED
- DS Breakdown Voltage-Min :
- 900V
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 26A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 25 ns
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Chassis Mount, Screw
- Case Connection :
- Isolated
- Number of Pins :
- 4
- Radiation Hardening :
- No
- Terminal Position :
- UPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 290W Tc
- Transistor Element Material :
- SILICON
- Rise Time :
- 20ns
- FET Feature :
- Super Junction
- Number of Elements :
- 1
- Power Dissipation :
- 290W
- Vgs(th) (Max) @ Id :
- 3.5V @ 3mA
- Series :
- CoolMOS™
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- FET Type :
- N-Channel
- Operating Temperature :
- -40°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 75A
- Continuous Drain Current (ID) :
- 33A
- Drain to Source Voltage (Vdss) :
- 900V
- Pin Count :
- 4
- Turn-Off Delay Time :
- 400 ns
- Packaging :
- Bulk
- Vgs (Max) :
- ±20V
- Datasheets
- APT33N90JCCU3
N-Channel Bulk 120m Ω @ 26A, 10V ±20V 6800pF @ 100V 270nC @ 10V 900V SOT-227-4, miniBLOC
APT33N90JCCU3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 6800pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 33A amps.It is [400 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 75A.A turn-on delay time of 70 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 900V to maintain normal operation.To operate this transistor, you will need a 900V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
APT33N90JCCU3 Features
a continuous drain current (ID) of 33A
the turn-off delay time is 400 ns
based on its rated peak drain current 75A.
a 900V drain to source voltage (Vdss)
APT33N90JCCU3 Applications
There are a lot of Microsemi Corporation
APT33N90JCCU3 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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