APT33N90JCCU2
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- Mfr.Part #
- APT33N90JCCU2
- Manufacturer
- Microsemi
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 33A SOT227
- Stock
- 29,242
- In Stock ：
- 29,242
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Form :
- UNSPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Operating Temperature :
- -40°C~150°C TJ
- Pin Count :
- 4
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- Continuous Drain Current (ID) :
- 33A
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 26A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Number of Pins :
- 4
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 400 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 20ns
- Fall Time (Typ) :
- 25 ns
- Drain to Source Voltage (Vdss) :
- 900V
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Vgs (Max) :
- ±20V
- DS Breakdown Voltage-Min :
- 900V
- Turn On Delay Time :
- 70 ns
- Mount :
- Chassis Mount, Screw
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Published :
- 1997
- Power Dissipation :
- 290W
- Terminal Position :
- UPPER
- Mounting Type :
- Chassis Mount
- Factory Lead Time :
- 22 Weeks
- FET Feature :
- Super Junction
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 75A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- SOT-227-4, miniBLOC
- Power Dissipation-Max :
- 290W Tc
- Datasheets
- APT33N90JCCU2
N-Channel Bulk 120m Ω @ 26A, 10V ±20V 6800pF @ 100V 270nC @ 10V 900V SOT-227-4, miniBLOC
APT33N90JCCU2 Overview
A device's maximal input capacitance is 6800pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 33A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 400 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 75A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 70 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 900V.This transistor requires a 900V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
APT33N90JCCU2 Features
a continuous drain current (ID) of 33A
the turn-off delay time is 400 ns
based on its rated peak drain current 75A.
a 900V drain to source voltage (Vdss)
APT33N90JCCU2 Applications
There are a lot of Microsemi Corporation
APT33N90JCCU2 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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