APT30N60SC6

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

219W Tc

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2267pF @ 25V

Series :

CoolMOS™

Number of Terminations :

2

Lead Free :

Lead Free

Power Dissipation :

219W

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

600V

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 10V

Rds On (Max) @ Id, Vgs :

125m Ω @ 14.5A, 10V

Turn On Delay Time :

9 ns

DS Breakdown Voltage-Min :

600V

Vgs (Max) :

±20V

Mount :

Surface Mount

Case Connection :

DRAIN

Pin Count :

3

Rise Time :

17ns

Vgs(th) (Max) @ Id :

3.5V @ 960μA

Continuous Drain Current (ID) :

30A

Gate to Source Voltage (Vgs) :

20V

Published :

1997

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Packaging :

Tube

Terminal Finish :

Tin

FET Type :

N-Channel

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Turn-Off Delay Time :

74 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

89A

Fall Time (Typ) :

48 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB