APT30N60KC6
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- Mfr.Part #
- APT30N60KC6
- Manufacturer
- Microsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 30A TO220
- Stock
- 7,602
- In Stock ：
- 7,602
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 14.5A, 10V
- Published :
- 2010
- Turn On Delay Time :
- 9 ns
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 219W Tc
- JESD-30 Code :
- R-PSFM-T3
- Mounting Type :
- Through Hole
- Terminal Position :
- Single
- Fall Time (Typ) :
- 48 ns
- RoHS Status :
- RoHS Compliant
- Terminal Finish :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 89A
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 636 mJ
- Power Dissipation :
- 219W
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 600V
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 74 ns
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Rise Time :
- 17ns
- Gate Charge (Qg) (Max) @ Vgs :
- 88nC @ 10V
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Series :
- CoolMOS™
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 30A
- DS Breakdown Voltage-Min :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2267pF @ 25V
- Package / Case :
- TO-220-3
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 3.5V @ 960μA
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- APT30N60KC6
N-Channel Tube 125m Ω @ 14.5A, 10V 2267pF @ 25V 88nC @ 10V 600V TO-220-3
APT30N60KC6 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 636 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2267pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 74 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 89A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).
APT30N60KC6 Features
the avalanche energy rating (Eas) is 636 mJ
a continuous drain current (ID) of 30A
the turn-off delay time is 74 ns
based on its rated peak drain current 89A.
a 600V drain to source voltage (Vdss)
APT30N60KC6 Applications
There are a lot of Microsemi Corporation
APT30N60KC6 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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