APT30N60BC6

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Mfr.Part #
APT30N60BC6
Manufacturer
Microchip Technology
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 30A TO247
Stock
3
In Stock :
3

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
600V
Pin Count :
3
Rise Time :
17ns
Terminal Position :
Single
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Pulsed Drain Current-Max (IDM) :
89A
Fall Time (Typ) :
48 ns
RoHS Status :
RoHS Compliant
Turn On Delay Time :
9 ns
Avalanche Energy Rating (Eas) :
636 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
DS Breakdown Voltage-Min :
600V
JESD-609 Code :
e1
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
2267pF @ 25V
Gate to Source Voltage (Vgs) :
20V
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Terminal Finish :
TIN SILVER COPPER
Lifecycle Status :
IN PRODUCTION (Last Updated: 2 days ago)
Radiation Hardening :
No
Continuous Drain Current (ID) :
30A
Number of Elements :
1
Vgs(th) (Max) @ Id :
3.5V @ 960μA
Power Dissipation :
219W
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Mount :
Through Hole
Number of Terminations :
3
Case Connection :
DRAIN
Package / Case :
TO-247-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
88nC @ 10V
Factory Lead Time :
22 Weeks
Configuration :
SINGLE WITH BUILT-IN DIODE
Series :
CoolMOS™
Transistor Element Material :
SILICON
Turn-Off Delay Time :
74 ns
Published :
1997
Additional Feature :
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
125m Ω @ 14.5A, 10V
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max :
219W Tc
Datasheets
APT30N60BC6
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology APT30N60BC6 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-247-3, APT30N60BC6 pinout, APT30N60BC6 datasheet PDF, APT30N60BC6 amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology APT30N60BC6 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology APT30N60BC6


N-Channel Tube 125m Ω @ 14.5A, 10V ±20V 2267pF @ 25V 88nC @ 10V 600V TO-247-3

APT30N60BC6 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 636 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2267pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 74 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 89A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 600V in order to maintain normal operation.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

APT30N60BC6 Features


the avalanche energy rating (Eas) is 636 mJ
a continuous drain current (ID) of 30A
the turn-off delay time is 74 ns
based on its rated peak drain current 89A.
a 600V drain to source voltage (Vdss)


APT30N60BC6 Applications


There are a lot of Microsemi Corporation
APT30N60BC6 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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