APT30M85BVRG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Continuous Drain Current (ID) :

40A

Vgs(th) (Max) @ Id :

4V @ 1mA

Turn On Delay Time :

12 ns

Transistor Element Material :

SILICON

Fall Time (Typ) :

7 ns

Height :

5.31mm

Voltage - Rated DC :

300V

Power Dissipation :

300W

Drain to Source Breakdown Voltage :

300V

Vgs (Max) :

±30V

JEDEC-95 Code :

TO-247AD

Rise Time :

10ns

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Current Rating :

40A

Drain-source On Resistance-Max :

0.085Ohm

Mounting Type :

Through Hole

Pin Count :

3

Case Connection :

DRAIN

Length :

21.46mm

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Weight :

38.000013g

Package / Case :

TO-247-3

Series :

POWER MOS V®

Terminal Finish :

TIN SILVER COPPER

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Lead Free :

Lead Free

ECCN Code :

EAR99

Number of Elements :

1

Radiation Hardening :

No

Width :

16.26mm

Rds On (Max) @ Id, Vgs :

85m Ω @ 500mA, 10V

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Published :

1997

Power Dissipation-Max :

300W Tc

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

4950pF @ 25V

Factory Lead Time :

31 Weeks

JESD-609 Code :

e1

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Number of Terminations :

3

Turn-Off Delay Time :

43 ns