APT30M85BVFRG
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- Mfr.Part #
- APT30M85BVFRG
- Manufacturer
- Microsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 40A TO247
- Stock
- 24,297
- In Stock ：
- 24,297
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 12 ns
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- POWER MOS V®
- Continuous Drain Current (ID) :
- 40A
- JESD-30 Code :
- R-PSFM-T3
- Rds On (Max) @ Id, Vgs :
- 85m Ω @ 500mA, 10V
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Rise Time :
- 10ns
- Pbfree Code :
- yes
- Package / Case :
- TO-247-3
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Vgs (Max) :
- ±30V
- Number of Elements :
- 1
- Voltage - Rated DC :
- 300V
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 4950pF @ 25V
- Terminal Finish :
- TIN SILVER COPPER
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation :
- 300W
- Drain-source On Resistance-Max :
- 0.085Ohm
- FET Type :
- N-Channel
- Additional Feature :
- FREDFET
- Fall Time (Typ) :
- 7 ns
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- Single
- Radiation Hardening :
- No
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 43 ns
- Published :
- 1997
- Current Rating :
- 40A
- Power Dissipation-Max :
- 300W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- APT30M85BVFRG
N-Channel Tube 85m Ω @ 500mA, 10V ±30V 4950pF @ 25V 195nC @ 10V TO-247-3
APT30M85BVFRG Overview
The maximum input capacitance of this device is 4950pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 40A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 43 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 12 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
APT30M85BVFRG Features
a continuous drain current (ID) of 40A
the turn-off delay time is 43 ns
APT30M85BVFRG Applications
There are a lot of Microsemi Corporation
APT30M85BVFRG applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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