APT30M70BVFRG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 1mA

Drain-source On Resistance-Max :

0.07Ohm

Turn On Delay Time :

14 ns

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Mount :

Through Hole

Packaging :

Tube

Fall Time (Typ) :

10 ns

Case Connection :

DRAIN

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Transistor Element Material :

SILICON

Voltage - Rated DC :

300V

Transistor Application :

SWITCHING

Rise Time :

21ns

Continuous Drain Current (ID) :

48A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

34 Weeks

Radiation Hardening :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

JESD-609 Code :

e1

Current Rating :

48A

Rds On (Max) @ Id, Vgs :

70m Ω @ 500mA, 10V

Mounting Type :

Through Hole

Turn-Off Delay Time :

57 ns

Terminal Position :

Single

Number of Elements :

1

JEDEC-95 Code :

TO-247AD

Number of Terminations :

3

Package / Case :

TO-247-3

JESD-30 Code :

R-PSFM-T3

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Power Dissipation-Max :

370W Tc

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Series :

POWER MOS V®

Power Dissipation :

370W

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

5870pF @ 25V

Terminal Finish :

TIN SILVER COPPER