APT30M40JVR
- Mfr.Part #
- APT30M40JVR
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 70A ISOTOP
- Stock
- 46,663
- In Stock :
- 46,663
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- Current Rating :
- 70A
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Vgs (Max) :
- ±30V
- Radiation Hardening :
- No
- Mounting Type :
- Chassis Mount
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 500mA, 10V
- Voltage - Rated DC :
- 300V
- Case Connection :
- Isolated
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Number of Elements :
- 1
- Packaging :
- Tube
- Rise Time :
- 20ns
- Terminal Form :
- UNSPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 280A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 48 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 450W Tc
- Series :
- POWER MOS V®
- Pbfree Code :
- yes
- Published :
- 1997
- Turn On Delay Time :
- 16 ns
- Factory Lead Time :
- 31 Weeks
- Power Dissipation :
- 450W
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 425nC @ 10V
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Terminal Position :
- UPPER
- Continuous Drain Current (ID) :
- 70A
- Number of Pins :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- SOT-227-4, miniBLOC
- Input Capacitance (Ciss) (Max) @ Vds :
- 10200pF @ 25V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Additional Feature :
- High Voltage
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 4
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Number of Terminations :
- 4
- Fall Time (Typ) :
- 4 ns
- Mount :
- Chassis Mount, Screw
- Datasheets
- APT30M40JVR

N-Channel Tube 40m Ω @ 500mA, 10V ±30V 10200pF @ 25V 425nC @ 10V SOT-227-4, miniBLOC
APT30M40JVR Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 2500 mJ.A device's maximum input capacitance is 10200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 70A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 48 ns.Its maximum pulsed drain current is 280A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT30M40JVR Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 70A
the turn-off delay time is 48 ns
based on its rated peak drain current 280A.
APT30M40JVR Applications
There are a lot of Microsemi Corporation
APT30M40JVR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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