APT30M40JVFR
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- Mfr.Part #
- APT30M40JVFR
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 70A ISOTOP
- Stock
- 1,056
- In Stock ：
- 1,056
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 4
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 280A
- Vgs (Max) :
- ±30V
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Mounting Type :
- Chassis Mount
- Series :
- POWER MOS V®
- Fall Time (Typ) :
- 4 ns
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Published :
- 1997
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- High Voltage
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10200pF @ 25V
- Transistor Element Material :
- SILICON
- Current Rating :
- 70A
- Gate Charge (Qg) (Max) @ Vgs :
- 425nC @ 10V
- Mount :
- Chassis Mount, Screw
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Turn On Delay Time :
- 16 ns
- Rise Time :
- 20ns
- Pin Count :
- 4
- Power Dissipation-Max :
- 450W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Power Dissipation :
- 450W
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 500mA, 10V
- JESD-609 Code :
- e1
- Turn-Off Delay Time :
- 48 ns
- Number of Elements :
- 1
- Packaging :
- Tube
- Voltage - Rated DC :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- UNSPECIFIED
- Terminal Position :
- UPPER
- Package / Case :
- SOT-227-4, miniBLOC
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 4
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 70A
- Factory Lead Time :
- 23 Weeks
- Datasheets
- APT30M40JVFR
N-Channel Tube 40m Ω @ 500mA, 10V ±30V 10200pF @ 25V 425nC @ 10V SOT-227-4, miniBLOC
APT30M40JVFR Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10200pF @ 25V.This device conducts a continuous drain current (ID) of 70A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 48 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 280A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT30M40JVFR Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 70A
the turn-off delay time is 48 ns
based on its rated peak drain current 280A.
APT30M40JVFR Applications
There are a lot of Microsemi Corporation
APT30M40JVFR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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