APT30F60J
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- Mfr.Part #
- APT30F60J
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 31A ISOTOP
- Stock
- 42,385
- In Stock ：
- 42,385
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 44 ns
- Number of Channels :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Position :
- UPPER
- Case Connection :
- Isolated
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 145 ns
- Turn On Delay Time :
- 48 ns
- Number of Terminations :
- 4
- Rise Time :
- 55ns
- Drain to Source Breakdown Voltage :
- 600V
- Weight :
- 30.000004g
- Power Dissipation :
- 355W
- Length :
- 38.2mm
- Mount :
- Chassis Mount, Screw
- Width :
- 25.4mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 8590pF @ 25V
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 31A Tc
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 21A, 10V
- Series :
- POWER MOS 8™
- RoHS Status :
- RoHS Compliant
- Package / Case :
- SOT-227-4, miniBLOC
- Factory Lead Time :
- 22 Weeks
- Packaging :
- Tube
- Mounting Type :
- Chassis Mount
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 31A
- Published :
- 1997
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 355W Tc
- Terminal Form :
- UNSPECIFIED
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 215nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 4
- Pin Count :
- 4
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Element Configuration :
- Single
- Height :
- 9.6mm
- Datasheets
- APT30F60J
N-Channel Tube 150m Ω @ 21A, 10V ±30V 8590pF @ 25V 215nC @ 10V SOT-227-4, miniBLOC
APT30F60J Overview
A device's maximum input capacitance is 8590pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 31A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=600V, and this device has a drain-to-source breakdown voltage of 600V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 145 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 48 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT30F60J Features
a continuous drain current (ID) of 31A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 145 ns
APT30F60J Applications
There are a lot of Microsemi Corporation
APT30F60J applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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