APT30F50S

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

POWER MOS 8™

Drain to Source Voltage (Vdss) :

500V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Factory Lead Time :

23 Weeks

Vgs(th) (Max) @ Id :

5V @ 1mA

Pulsed Drain Current-Max (IDM) :

90A

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

190m Ω @ 14A, 10V

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

PURE MATTE TIN

Mounting Type :

Surface Mount

Vgs (Max) :

±30V

Pin Count :

3

Power Dissipation-Max :

415W Tc

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Transistor Application :

SWITCHING

Number of Elements :

1

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Packaging :

Tube

Published :

1997

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

415W

Peak Reflow Temperature (Cel) :

245

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

DS Breakdown Voltage-Min :

500V

Input Capacitance (Ciss) (Max) @ Vds :

4525pF @ 25V

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

FET Type :

N-Channel

Terminal Position :

Single

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

30A

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

115nC @ 10V