APT30F50B
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- Mfr.Part #
- APT30F50B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A TO247
- Stock
- 96
- In Stock ：
- 96
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 50 ns
- Length :
- 21.46mm
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4525pF @ 25V
- Radiation Hardening :
- No
- Additional Feature :
- FAST SWITCHING, AVALANCHE RATED
- Width :
- 16.26mm
- Package / Case :
- TO-247-3
- Vgs (Max) :
- ±30V
- Drain to Source Breakdown Voltage :
- 500V
- Turn On Delay Time :
- 20 ns
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-247AB
- Gate Charge (Qg) (Max) @ Vgs :
- 115nC @ 10V
- Weight :
- 38.000013g
- Power Dissipation-Max :
- 415W Tc
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 415W
- Current Rating :
- 30A
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Height :
- 5.31mm
- Terminal Position :
- Single
- Pbfree Code :
- yes
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 14A, 10V
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 30A
- Series :
- POWER MOS 8™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 17 ns
- Published :
- 1997
- Terminal Finish :
- PURE MATTE TIN
- Transistor Application :
- SWITCHING
- Rise Time :
- 23ns
- Voltage - Rated DC :
- 500V
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSFM-T3
- Factory Lead Time :
- 22 Weeks
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 90A
- Datasheets
- APT30F50B
N-Channel Tube 190m Ω @ 14A, 10V ±30V 4525pF @ 25V 115nC @ 10V TO-247-3
APT30F50B Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4525pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 90A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT30F50B Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 90A.
APT30F50B Applications
There are a lot of Microsemi Corporation
APT30F50B applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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