APT30F50B
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- Mfr.Part #
- APT30F50B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 30A TO247
- Stock
- 96
- In Stock ：
- 96
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Position :
- Single
- Mounting Type :
- Through Hole
- Published :
- 1997
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 415W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 115nC @ 10V
- JESD-609 Code :
- e3
- Pulsed Drain Current-Max (IDM) :
- 90A
- Fall Time (Typ) :
- 17 ns
- JEDEC-95 Code :
- TO-247AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 4525pF @ 25V
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- RoHS Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Series :
- POWER MOS 8™
- FET Type :
- N-Channel
- Height :
- 5.31mm
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 500V
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 14A, 10V
- Continuous Drain Current (ID) :
- 30A
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Vgs (Max) :
- ±30V
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Additional Feature :
- FAST SWITCHING, AVALANCHE RATED
- Factory Lead Time :
- 22 Weeks
- Width :
- 16.26mm
- Current Rating :
- 30A
- Turn On Delay Time :
- 20 ns
- Turn-Off Delay Time :
- 50 ns
- Weight :
- 38.000013g
- Number of Terminations :
- 3
- Rise Time :
- 23ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Terminal Finish :
- PURE MATTE TIN
- Drain to Source Breakdown Voltage :
- 500V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Length :
- 21.46mm
- Power Dissipation :
- 415W
- Package / Case :
- TO-247-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- APT30F50B
N-Channel Tube 190m Ω @ 14A, 10V ±30V 4525pF @ 25V 115nC @ 10V TO-247-3
APT30F50B Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4525pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 50 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 90A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT30F50B Features
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 90A.
APT30F50B Applications
There are a lot of Microsemi Corporation
APT30F50B applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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