APT29F100L

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e1

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Fall Time (Typ) :

33 ns

Rise Time :

35ns

Power Dissipation :

1.04kW

FET Type :

N-Channel

Mounting Type :

Through Hole

Pin Count :

3

Turn On Delay Time :

39 ns

Number of Elements :

1

Power Dissipation-Max :

1040W Tc

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Current Rating :

29A

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Voltage - Rated DC :

1kV

Lead Free :

Lead Free

Continuous Drain Current (ID) :

30A

Factory Lead Time :

22 Weeks

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Case Connection :

DRAIN

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

1000V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

1997

Packaging :

Tube

Drain-source On Resistance-Max :

0.44Ohm

Rds On (Max) @ Id, Vgs :

460m Ω @ 16A, 10V

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

8500pF @ 25V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Terminal Finish :

TIN SILVER COPPER

Turn-Off Delay Time :

130 ns

Package / Case :

TO-264-3, TO-264AA

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

RoHS Status :

RoHS Compliant