APT29F100B2
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- Mfr.Part #
- APT29F100B2
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 30A T-MAX
- Stock
- 45,409
- In Stock ：
- 45,409
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 1000V
- JESD-609 Code :
- e1
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 1040W Tc
- Current Rating :
- 29A
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 22 Weeks
- Series :
- POWER MOS 8™
- Mount :
- Through Hole
- Turn On Delay Time :
- 39 ns
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Drain-source On Resistance-Max :
- 0.44Ohm
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Terminal Finish :
- TIN SILVER COPPER
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Rise Time :
- 35ns
- Continuous Drain Current (ID) :
- 30A
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Power Dissipation :
- 1.04kW
- Published :
- 1997
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 440m Ω @ 16A, 10V
- Number of Elements :
- 1
- Package / Case :
- TO-247-3 Variant
- Radiation Hardening :
- No
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 8500pF @ 25V
- Voltage - Rated DC :
- 1kV
- Turn-Off Delay Time :
- 130 ns
- Fall Time (Typ) :
- 33 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- APT29F100B2
N-Channel Tube 440m Ω @ 16A, 10V ±30V 8500pF @ 25V 260nC @ 10V 1000V TO-247-3 Variant
APT29F100B2 Overview
The maximum input capacitance of this device is 8500pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 130 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 39 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 1000V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
APT29F100B2 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 130 ns
a 1000V drain to source voltage (Vdss)
APT29F100B2 Applications
There are a lot of Microsemi Corporation
APT29F100B2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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