APT29F100B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Terminal Position :

Single

Drain-source On Resistance-Max :

0.44Ohm

Pin Count :

3

Drain to Source Voltage (Vdss) :

1000V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Radiation Hardening :

No

Vgs (Max) :

±30V

Number of Pins :

3

Pbfree Code :

yes

Mounting Type :

Through Hole

Factory Lead Time :

22 Weeks

Voltage - Rated DC :

1kV

Packaging :

Tube

Fall Time (Typ) :

33 ns

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Package / Case :

TO-247-3 Variant

Series :

POWER MOS 8™

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Published :

1997

Power Dissipation-Max :

1040W Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Power Dissipation :

1.04kW

Input Capacitance (Ciss) (Max) @ Vds :

8500pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

30A

Turn-Off Delay Time :

130 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

39 ns

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Current Rating :

29A

Mount :

Through Hole

JESD-609 Code :

e1

Terminal Finish :

TIN SILVER COPPER

Rise Time :

35ns

Rds On (Max) @ Id, Vgs :

440m Ω @ 16A, 10V

Case Connection :

DRAIN