APT28M120B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Pbfree Code :

yes

Factory Lead Time :

18 Weeks

Current Rating :

28A

Packaging :

Tube

Fall Time (Typ) :

48 ns

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Gate to Source Voltage (Vgs) :

30V

Series :

POWER MOS 8™

Continuous Drain Current (ID) :

29A

Terminal Finish :

Pure Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Lead Free :

Lead Free

Terminal Position :

Single

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

560m Ω @ 14A, 10V

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

9670pF @ 25V

Drain to Source Voltage (Vdss) :

1200V

Mount :

Through Hole

Package / Case :

TO-247-3 Variant

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Transistor Application :

SWITCHING

Rise Time :

31ns

Radiation Hardening :

No

FET Type :

N-Channel

Number of Pins :

3

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Voltage - Rated DC :

1.2kV

Power Dissipation-Max :

1135W Tc

Mounting Type :

Through Hole

Turn-Off Delay Time :

170 ns

ECCN Code :

EAR99

Turn On Delay Time :

50 ns