APT28F60S

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Power Dissipation-Max :

520W Tc

Series :

POWER MOS 8™

Power Dissipation :

520W

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Packaging :

Tube

DS Breakdown Voltage-Min :

600V

Peak Reflow Temperature (Cel) :

245

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

5575pF @ 25V

Qualification Status :

Not Qualified

FET Type :

N-Channel

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

220m Ω @ 14A, 10V

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Published :

1997

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.22Ohm

Drain to Source Voltage (Vdss) :

600V

Terminal Finish :

PURE MATTE TIN

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Single

Number of Pins :

3

Avalanche Energy Rating (Eas) :

780 mJ

Continuous Drain Current (ID) :

30A

Transistor Element Material :

SILICON

Pin Count :

3

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Vgs(th) (Max) @ Id :

5V @ 1mA

Vgs (Max) :

±30V

JESD-30 Code :

R-PSSO-G2