APT28F60B

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

520W Tc

Continuous Drain Current (ID) :

30A

Published :

1997

Pin Count :

3

Turn-Off Delay Time :

95 ns

Power Dissipation :

520W

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Case Connection :

DRAIN

Voltage - Rated DC :

600V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSFM-T3

Avalanche Energy Rating (Eas) :

780 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

250m Ω @ 14A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

JEDEC-95 Code :

TO-247AD

JESD-609 Code :

e1

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

31 ns

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Rise Time :

36ns

Mount :

Through Hole

Vgs (Max) :

±30V

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.22Ohm

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

5575pF @ 25V

Mounting Type :

Through Hole

Terminal Finish :

TIN SILVER COPPER

Terminal Position :

Single

FET Type :

N-Channel

Package / Case :

TO-247-3

Gate Charge (Qg) (Max) @ Vgs :

140nC @ 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Number of Terminations :

3

Fall Time (Typ) :

29 ns

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 1mA

Current Rating :

28A