APT26M100JCU3

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

DS Breakdown Voltage-Min :

1000V

Number of Pins :

4

Radiation Hardening :

No

Vgs (Max) :

±30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

396m Ω @ 18A, 10V

Packaging :

Bulk

Drain Current-Max (Abs) (ID) :

26A

Series :

POWER MOS 8™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Chassis Mount

Drain to Source Voltage (Vdss) :

1000V

Number of Terminations :

4

Drain-source On Resistance-Max :

0.396Ohm

Terminal Position :

UPPER

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1997

Terminal Form :

UNSPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

7868pF @ 25V

Operating Temperature :

-40°C~150°C TJ

Package / Case :

SOT-227-4, miniBLOC

Gate Charge (Qg) (Max) @ Vgs :

305nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

26A Tc

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

20A

Pin Count :

4

Number of Elements :

1

RoHS Status :

RoHS Compliant

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

Additional Feature :

AVALANCHE RATED

Mount :

Chassis Mount, Screw

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Power Dissipation-Max :

543W Tc