APT24M80S

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Bulk

Qualification Status :

Not Qualified

Factory Lead Time :

30 Weeks

FET Type :

N-Channel

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

975 mJ

Series :

POWER MOS 8™

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Continuous Drain Current (ID) :

25A

Mount :

Surface Mount

Terminal Form :

Gull wing

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

4595pF @ 25V

Terminal Finish :

PURE MATTE TIN

DS Breakdown Voltage-Min :

800V

Pin Count :

3

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

390m Ω @ 12A, 10V

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

0.39Ohm

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

85A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

245

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

800V

Published :

1997

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

625W Tc