APT24M80B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

29 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

33 ns

Avalanche Energy Rating (Eas) :

975 mJ

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Rise Time :

38ns

Rds On (Max) @ Id, Vgs :

390m Ω @ 12A, 10V

Case Connection :

DRAIN

Lead Free :

Lead Free

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

85A

Turn On Delay Time :

26 ns

Number of Terminations :

3

ECCN Code :

EAR99

Pin Count :

3

Series :

POWER MOS 8™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

800V

Input Capacitance (Ciss) (Max) @ Vds :

4595pF @ 25V

Packaging :

Tube

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Current Rating :

24A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

JEDEC-95 Code :

TO-247AD

Vgs(th) (Max) @ Id :

5V @ 1mA

Continuous Drain Current (ID) :

25A

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Terminal Position :

Single

Published :

1997

Power Dissipation-Max :

625W Tc

Vgs (Max) :

±30V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.39Ohm

Power Dissipation :

625W

Turn-Off Delay Time :

115 ns

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Transistor Application :

SWITCHING