APT24F50S

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

335W Tc

Number of Pins :

3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Pulsed Drain Current-Max (IDM) :

82A

JESD-609 Code :

e3

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Mount :

Surface Mount

Terminal Position :

Single

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

245

Drain-source On Resistance-Max :

0.24Ohm

DS Breakdown Voltage-Min :

500V

Continuous Drain Current (ID) :

24A

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Vgs(th) (Max) @ Id :

5V @ 1mA

Series :

POWER MOS 8™

Published :

1997

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

240m Ω @ 11A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

495 mJ

Number of Elements :

1

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Terminal Finish :

PURE MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

3630pF @ 25V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant