APT24F50S

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3630pF @ 25V

Terminal Position :

Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Series :

POWER MOS 8™

Packaging :

Tube

DS Breakdown Voltage-Min :

500V

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Number of Elements :

1

FET Type :

N-Channel

Case Connection :

DRAIN

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Drain to Source Voltage (Vdss) :

500V

Continuous Drain Current (ID) :

24A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5V @ 1mA

Pulsed Drain Current-Max (IDM) :

82A

Time@Peak Reflow Temperature-Max (s) :

30

Avalanche Energy Rating (Eas) :

495 mJ

Drain-source On Resistance-Max :

0.24Ohm

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

240m Ω @ 11A, 10V

Published :

1997

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Number of Terminations :

2

Number of Pins :

3

Peak Reflow Temperature (Cel) :

245

Terminal Finish :

PURE MATTE TIN

Pbfree Code :

yes

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Mount :

Surface Mount

Power Dissipation-Max :

335W Tc