APT24F50B
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- Mfr.Part #
- APT24F50B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 24A TO247
- Stock
- 30,259
- In Stock ：
- 30,259
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Power Dissipation :
- 335W
- Rise Time :
- 19ns
- JESD-30 Code :
- R-PSFM-T3
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 16 ns
- Avalanche Energy Rating (Eas) :
- 495 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Current Rating :
- 24A
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Turn-Off Delay Time :
- 41 ns
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 24A
- Pbfree Code :
- yes
- Package / Case :
- TO-247-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3630pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max :
- 0.24Ohm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±30V
- Rds On (Max) @ Id, Vgs :
- 240m Ω @ 11A, 10V
- Published :
- 1997
- Voltage - Rated DC :
- 500V
- Pulsed Drain Current-Max (IDM) :
- 82A
- Packaging :
- Tube
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 335W Tc
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 14 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 10V
- JESD-609 Code :
- e1
- Pin Count :
- 3
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Series :
- POWER MOS 8™
- Factory Lead Time :
- 22 Weeks
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Terminal Position :
- Single
- Mount :
- Through Hole
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- TO-247AD
- Datasheets
- APT24F50B
N-Channel Tube 240m Ω @ 11A, 10V ±30V 3630pF @ 25V 90nC @ 10V TO-247-3
APT24F50B Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 495 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3630pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 24A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 41 ns.Peak drain current is 82A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 16 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
APT24F50B Features
the avalanche energy rating (Eas) is 495 mJ
a continuous drain current (ID) of 24A
the turn-off delay time is 41 ns
based on its rated peak drain current 82A.
APT24F50B Applications
There are a lot of Microsemi Corporation
APT24F50B applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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