APT23F60S

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

245

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

80A

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Mount :

Surface Mount

JESD-609 Code :

e3

Power Dissipation-Max :

415W Tc

Drain to Source Voltage (Vdss) :

600V

Drain-source On Resistance-Max :

0.29Ohm

Qualification Status :

Not Qualified

Packaging :

Tube

Published :

1997

Terminal Finish :

PURE MATTE TIN

Transistor Application :

SWITCHING

Pbfree Code :

yes

DS Breakdown Voltage-Min :

600V

Series :

POWER MOS 8™

Pin Count :

3

Vgs(th) (Max) @ Id :

5V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

24A Tc

RoHS Status :

RoHS Compliant

Number of Elements :

1

Terminal Position :

Single

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

290m Ω @ 11A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

4415pF @ 25V

FET Type :

N-Channel

Continuous Drain Current (ID) :

24A

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

615 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE