APT23F60B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

25 ns

Turn-Off Delay Time :

75 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-247-3

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Power Dissipation :

415W

Number of Terminations :

3

Published :

1997

Drain-source On Resistance-Max :

0.29Ohm

Series :

POWER MOS 8™

Fall Time (Typ) :

23 ns

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Voltage - Rated DC :

600V

JEDEC-95 Code :

TO-247AD

Vgs(th) (Max) @ Id :

5V @ 1mA

FET Type :

N-Channel

Power Dissipation-Max :

415W Tc

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Continuous Drain Current (ID) :

24A

JESD-609 Code :

e1

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Case Connection :

DRAIN

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Current Rating :

23A

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

4415pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Number of Elements :

1

Pbfree Code :

yes

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

80A

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

290m Ω @ 11A, 10V

Lead Free :

Lead Free

Rise Time :

29ns

Factory Lead Time :

22 Weeks