APT22F80S

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

23A

DS Breakdown Voltage-Min :

800V

Power Dissipation-Max :

625W Tc

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

430m Ω @ 12A, 10V

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Published :

1997

Terminal Position :

Single

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.43Ohm

Factory Lead Time :

34 Weeks

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Vgs (Max) :

±30V

Series :

POWER MOS 8™

Drain to Source Voltage (Vdss) :

800V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

975 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

85A

Terminal Finish :

PURE MATTE TIN

Packaging :

Tube

Pin Count :

3

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

5V @ 1mA

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

4595pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

245

Configuration :

SINGLE WITH BUILT-IN DIODE