APT22F80B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

5.31mm

Transistor Element Material :

SILICON

Power Dissipation-Max :

625W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Terminal Finish :

TIN SILVER COPPER

JESD-609 Code :

e1

Case Connection :

DRAIN

Mount :

Through Hole

Fall Time (Typ) :

33 ns

Turn-Off Delay Time :

115 ns

Vgs(th) (Max) @ Id :

5V @ 1mA

Terminal Position :

Single

Voltage - Rated DC :

800V

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.43Ohm

Published :

1997

Continuous Drain Current (ID) :

23A

Transistor Application :

SWITCHING

Power Dissipation :

625W

Number of Terminations :

3

Turn On Delay Time :

26 ns

Factory Lead Time :

33 Weeks

Rds On (Max) @ Id, Vgs :

500m Ω @ 12A, 10V

Packaging :

Tube

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

4595pF @ 25V

Width :

16.26mm

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

Radiation Hardening :

No

RoHS Status :

RoHS Compliant

Number of Elements :

1

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

85A

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Avalanche Energy Rating (Eas) :

975 mJ

Vgs (Max) :

±30V

Length :

21.46mm

Pin Count :

3

Rise Time :

38ns

Current Rating :

22A

Weight :

38.000013g

Operating Temperature :

-55°C~150°C TJ