APT22F80B
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- Mfr.Part #
- APT22F80B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 23A TO247
- Stock
- 16,166
- In Stock ：
- 16,166
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 30V
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 22A
- Input Capacitance (Ciss) (Max) @ Vds :
- 4595pF @ 25V
- FET Type :
- N-Channel
- Turn On Delay Time :
- 26 ns
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Avalanche Energy Rating (Eas) :
- 975 mJ
- Continuous Drain Current (ID) :
- 23A
- Weight :
- 38.000013g
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 12A, 10V
- Mounting Type :
- Through Hole
- Published :
- 1997
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Factory Lead Time :
- 33 Weeks
- Terminal Finish :
- TIN SILVER COPPER
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 33 ns
- Case Connection :
- DRAIN
- Turn-Off Delay Time :
- 115 ns
- Package / Case :
- TO-247-3
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 625W
- Width :
- 16.26mm
- Radiation Hardening :
- No
- Pulsed Drain Current-Max (IDM) :
- 85A
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max :
- 625W Tc
- Vgs (Max) :
- ±30V
- Length :
- 21.46mm
- Drain-source On Resistance-Max :
- 0.43Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 800V
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Rise Time :
- 38ns
- Height :
- 5.31mm
- Number of Terminations :
- 3
- Datasheets
- APT22F80B
N-Channel Tube 500m Ω @ 12A, 10V ±30V 4595pF @ 25V 150nC @ 10V TO-247-3
APT22F80B Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 975 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4595pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 115 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 85A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 26 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (10V).
APT22F80B Features
the avalanche energy rating (Eas) is 975 mJ
a continuous drain current (ID) of 23A
the turn-off delay time is 115 ns
based on its rated peak drain current 85A.
APT22F80B Applications
There are a lot of Microsemi Corporation
APT22F80B applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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